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The BC847SH6433XTMA1 is a dual NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a SOT-363-6 surface-mount package and operates with a maximum DC collector current of 200 mA. The device features a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. Key electrical parameters include a gain-bandwidth product (fT) of 250 MHz, a power dissipation (Pd) of 250 mW, and a collector-emitter saturation voltage of 200 mV. The component supports a minimum operating temperature of -65 °C and a maximum of +150 °C, with AEC-Q100 qualification.
Verify the specific ordering suffix to confirm the exact binning or packaging format required for the design. Confirm availability status as distribution channels may indicate discontinuation or limited regional sales. Ensure the selected variant matches the required hFE range and thermal specifications for the target application environment.
Select this component when a dual NPN BJT topology is needed in a small form factor. The AEC-Q100 qualification makes it suitable for automotive environments. Compare the 200 mA continuous current rating against peak load requirements. Verify that the SOT-363-6 footprint fits the PCB layout constraints compared to single-transistor alternatives.
This part belongs to the BC847 series of small-signal transistors from Infineon. The 'S' designation typically indicates a dual configuration, distinguishing it from the standard single-transistor BC847 variants. It shares similar electrical characteristics with other members of the family but offers integrated dual functionality to save board space.
Yes, the component is qualified according to the AEC-Q100 standard.
The maximum collector-emitter voltage (VCEO) is 45 V.
It contains two NPN transistors in a dual configuration.