BC847SH6433XTMA1

BC847SH6433XTMA1

$0.04
  • Description:TRANS 2NPN 45V 0.1A PG-SOT363-PO
  • Series:-

SKU:4eaa527ed625 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS 2NPN 45V 0.1A PG-SOT363-PO
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:2 NPN (Dual)
  • Current - Collector (Ic) (Max):100mA
  • Voltage - Collector Emitter Breakdown (Max):45V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:6-VSSOP, SC-88, SOT-363
  • Supplier Device Package:PG-SOT363-PO
  • Grade:-
  • Qualification:-

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BC847SH6433XTMA1

Overview

The BC847SH6433XTMA1 is a dual NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a SOT-363-6 surface-mount package and operates with a maximum DC collector current of 200 mA. The device features a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 6 V. Key electrical parameters include a gain-bandwidth product (fT) of 250 MHz, a power dissipation (Pd) of 250 mW, and a collector-emitter saturation voltage of 200 mV. The component supports a minimum operating temperature of -65 °C and a maximum of +150 °C, with AEC-Q100 qualification.

Feature Summary

  • Dual NPN configuration providing two isolated transistors within a single compact package for galvanic isolation and matching.

Applications

  • Automotive electronics requiring AEC-Q100 qualified components

Procurement Notes

Verify the specific ordering suffix to confirm the exact binning or packaging format required for the design. Confirm availability status as distribution channels may indicate discontinuation or limited regional sales. Ensure the selected variant matches the required hFE range and thermal specifications for the target application environment.

Selection Notes

Select this component when a dual NPN BJT topology is needed in a small form factor. The AEC-Q100 qualification makes it suitable for automotive environments. Compare the 200 mA continuous current rating against peak load requirements. Verify that the SOT-363-6 footprint fits the PCB layout constraints compared to single-transistor alternatives.

Part Context

This part belongs to the BC847 series of small-signal transistors from Infineon. The 'S' designation typically indicates a dual configuration, distinguishing it from the standard single-transistor BC847 variants. It shares similar electrical characteristics with other members of the family but offers integrated dual functionality to save board space.

Replacement Considerations

  • BC847BWH6433XTMA1
  • BC846S
  • BC847S

FAQ

Is the BC847SH6433XTMA1 qualified for automotive applications?

Yes, the component is qualified according to the AEC-Q100 standard.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is 45 V.

Does this part contain one or two transistors?

It contains two NPN transistors in a dual configuration.

BC847SH6433XTMA1BC847SH6433XTMA1
$0.04
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