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The BC848AW-7-F is an NPN small signal transistor manufactured by Diodes Incorporated, housed in a SOT323 surface-mount package. It features a collector-emitter breakdown voltage (BVCEO) of 30V and a continuous collector current (IC) rating of 100mA. The device supports a peak collector current of 200mA with a maximum power dissipation of 200mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) range of 110 to 220 for the 'A' band, measured at VCE=5.0V and IC=2.0mA. Transition frequency (fT) reaches up to 300MHz under standard test conditions.
Verify the specific ordering suffix '-7-F' corresponds to the 3,000-unit reel packing configuration as defined in the manufacturer's ordering information. Confirm that the 'A' band marking code K1Q matches the required DC current gain specifications for your design. Ensure compliance with the stated environmental directives, including RoHS 3 and REACH requirements, before finalizing procurement documentation.
Select this component when a 30V collector-emitter voltage rating is sufficient for the application circuit. The 'A' band designation indicates a minimum hFE of 110, suitable for general-purpose amplification where high gain is not critical. Consider the SOT323 package dimensions for PCB layout constraints and verify thermal management capabilities against the specified junction-to-ambient thermal resistance values.
This part belongs to the BC846AW–BC848CW series of NPN small signal transistors. It shares the same physical SOT323 package and mechanical data as other variants in the family, differing primarily in voltage ratings and gain bands. Complementary PNP types are available within the BC856W–BC858W series for push-pull or differential circuit configurations.
Direct substitutes within the same voltage and package family include BC846AW-7-F and BC847AW-7-F, provided their respective higher voltage ratings do not conflict with design margins. Verify pinout compatibility and ensure the replacement part meets the same electrical gain band requirements.
The BC848AW variant has a DC current gain (hFE) ranging from 110 to 220, measured at VCE = 5.0V and IC = 2.0mA.
Standard production may not be automotive qualified. For automotive applications requiring AEC-Q100/101/104/200 qualification and PPAP capability, contact Diodes Incorporated directly.
The maximum collector-base breakdown voltage (BVCBO) for the BC848AW is 30V, tested at IC = 100µA.