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The BC848AW-TP is a single NPN bipolar junction transistor manufactured by Micro Commercial Components. It features a SOT-323 surface-mount package and operates with a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device has a maximum power dissipation of 150 mW and a transition frequency of 100 MHz. DC current gain (hFE) is specified at a minimum of 110 at 2 mA and 5 V, with a collector cutoff current of 100 nA. The saturation voltage is 600 mV at 5 mA base and 100 mA collector currents. It supports a junction temperature range from -65°C to 150°C.
Verify the specific suffix against official MCC documentation to confirm package type and electrical ratings. Datasheets may vary between distributors; rely on the manufacturer's official specification sheet for accurate hFE, Vce(sat), and thermal limits. Confirm RoHS status and lead times directly with authorized suppliers before integration.
Select this component for designs requiring a compact NPN signal transistor in a SOT-323 footprint. Ensure the 150 mW power dissipation limit and 30 V breakdown voltage align with circuit requirements. Verify that the 100 mA collector current capacity meets load demands without exceeding thermal constraints.
This part belongs to the BC848 series of small-signal NPN transistors produced by Micro Commercial Components. The series includes variants like BC848A and BC848B, differentiated primarily by DC current gain ranges. The AW-TP designation indicates the specific gain bin and packaging configuration offered by MCC.
The maximum power dissipation is 150 mW.
The transition frequency is 100 MHz.
The minimum DC current gain (hFE) is 110 at 2 mA and 5 V.