SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC848AW_R1_00001 is an NPN general-purpose small signal transistor manufactured by Panjit International Inc. It utilizes a silicon epitaxial planar design and is housed in a SOT-323 surface-mount package. The device supports a maximum collector current of 100 mA and offers a collector-emitter breakdown voltage of 45 V. It features a minimum DC current gain (hFE) of 110, ensuring reliable amplification performance. The component operates within a temperature range up to 150 °C and complies with RoHS directives.
Verify the specific suffix _R1_00001 against official Panjit documentation to confirm reel packaging specifications. Ensure the selected variant matches the required hFE binning and thermal characteristics for the target application. Cross-reference datasheet revisions to confirm pinout consistency and material compliance status before integration into production designs.
Select this component when a compact NPN transistor with 45 V breakdown and 100 mA continuous current rating is required. The SOT-323 package is ideal for space-constrained printed circuit board layouts. Consider the minimum hFE of 110 for biasing calculations in amplifier stages. Verify thermal management requirements given the 150 °C maximum junction temperature limit.
This part belongs to the BC848W series of NPN general-purpose transistors from Panjit. The series includes variants with different voltage ratings such as BC846W, BC847W, and BC849W. The BC848AW specifically denotes the 45 V breakdown voltage variant within this family, designed for versatile use in modern electronic equipment requiring small form factor components.
Compatible substitutes include BC848A, BC848B, and BC848C from various manufacturers, provided they match the SOT-323 package and electrical limits. Verify that replacement parts maintain equivalent hFE ranges and power dissipation capabilities to ensure circuit functionality remains unchanged.