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The BC848AWT1 is a single NPN silicon small-signal bipolar junction transistor manufactured by onsemi. It is housed in the SOT-323 surface-mount package, designed for low-power applications. The device supports a maximum continuous collector current of 100 mA and offers a collector-emitter breakdown voltage of 30 V. Key electrical characteristics include a minimum DC current gain (hFE) of 110 at specified test conditions and a transition frequency of 100 MHz. The component operates within a temperature range of -55°C to +150°C.
Verify the specific hFE binning code associated with the BC848AWT1 suffix against the official onsemi datasheet, as gain ranges vary across the BC848 series. Confirm that the SOT-323 package dimensions match the target PCB footprint requirements. Ensure compliance with RoHS directives if required by the end product specifications before finalizing procurement.
Select this component when a compact NPN transistor with moderate gain and 30V rating is needed for space-constrained designs. Compare the 100 mA current limit and 100 MHz bandwidth against circuit requirements. Consider alternative packages like SOT-23 if higher thermal dissipation is necessary, or different hFE bins if precise gain control is critical for the application.
This part belongs to the BC848 family of general-purpose NPN transistors from onsemi. The 'A' designation typically indicates a specific DC current gain range, while 'WT1' denotes the SOT-323 packaging and tape-and-reel shipping configuration. This series is widely used in portable devices and battery-operated equipment due to its small form factor and efficiency.
Compatible substitutes include BC848ALT1G and BC848BWT1 from onsemi, which share similar electrical profiles but may differ in gain binning. Cross-manufacturer equivalents such as those from Diotec or LRC are available but require verification of pinout compatibility and exact parameter matching.