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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
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Overview
The BC848AWT1G is a single NPN bipolar junction transistor manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V. The maximum DC collector current (IC) is 100 mA, with a minimum DC current gain (hFE) of 110 at IC=2mA and VCE=5V. The device has a transition frequency (fT) of 100 MHz and a maximum power dissipation (Pd) of 225 mW. It operates within a temperature range of -55°C to +150°C TJ. The component is housed in an SOT-23 surface-mount package.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplifier applications
- High current gain capability suitable for switching and amplification tasks
- Surface-mount construction optimized for automated assembly processes
Applications
- General purpose amplifier circuits
- Signal switching applications
- Low-power logic interface stages
Procurement Notes
Verify the specific suffix 'AW' against official datasheets to confirm the hFE binning grade, as variations exist within the BC848 family. Ensure the ordering part number matches the required gain characteristics for your design. Confirm RoHS compliance status through the manufacturer's material declaration documents prior to final procurement decisions.
Selection Notes
Select this component when a standard NPN transistor with 30V rating and 100mA capacity is required in an SOT-23 package. Compare the hFE minimum value of 110 against circuit requirements; higher gain variants like the BC848B or C series may be necessary if greater amplification is needed. Verify thermal management capabilities given the 225mW power dissipation limit in small packages.
Part Context
This part belongs to the BC846/BC847/BC848 series of general-purpose NPN transistors from onsemi. These devices are widely used in consumer electronics and industrial control systems due to their reliability and small form factor. The BC848 variant specifically offers a balance of voltage and current handling suitable for low-power signal processing tasks.
Replacement Considerations
Direct pin-compatible substitutes include other manufacturers' BC848A equivalents in SOT-23 packages. Verify that alternative parts meet the same 30V VCEO, 100mA IC, and hFE >= 110 specifications. Check for identical thermal resistance and package dimensions to ensure mechanical fit without redesign.
