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The BC848AWT1G is an NPN general-purpose small-signal transistor manufactured by onsemi. It utilizes silicon epitaxial planar technology and is housed in a surface-mount SOT-323 package. The device supports a maximum collector current of 100 mA and offers a collector-emitter breakdown voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) of 65 V. It features a minimum DC current gain (hFE) of 110 at IC=2mA and VCE=5V. Power dissipation is rated at 150 mW, with a transition frequency (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix 'AW' indicates the 45V/65V voltage rating variant distinct from other BC848 series grades. Confirm AEC-Q101 automotive qualification status if required for the target application. Ensure the SOT-323 package dimensions match the PCB footprint requirements. Check RoHS compliance documentation for environmental regulations.
Select this component when a 45V NPN transistor is needed in a compact SOT-323 package. It serves as a suitable replacement for standard BC848 types where higher voltage tolerance is required. Consider the 100 mA continuous collector current limit for load handling. Verify thermal management capabilities given the 150 mW power dissipation rating in small packages.
This part belongs to the BC846W through BC850W series of NPN general-purpose transistors produced by onsemi (formerly Fairchild Semiconductor). The series shares common packaging and manufacturing processes but varies in voltage ratings and gain bands. The BC848AW specifically denotes the NPN type with 45V VCEO characteristics within this lineup.
Direct substitutes include BC848BWT1G or BC848CWT1G from onsemi, provided voltage ratings meet circuit requirements. Cross-manufacturer equivalents like PANJIT's BC848AW are functionally similar but require verification of pinout and electrical tolerances against the original datasheet specifications.