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The BC848B-13-F is an NPN small-signal transistor manufactured by Diodes Incorporated, housed in a SOT23 plastic package. It features a collector-emitter voltage (VCEO) of 30 V and a continuous collector current (IC) of 100 mA. The device provides a DC current gain (hFE) range of 200 to 450 at IC = 2.0 mA and VCE = 5 V. Electrical characteristics include a transition frequency (fT) of 100 MHz and a power dissipation rating of 310 mW under standard conditions.
Verify the specific ordering suffix '-13-F' corresponds to the 13-inch reel packaging configuration containing 10,000 units per carrier. Confirm that the component marking 'K1R' matches the received inventory. Ensure compliance with J-STD-020 moisture sensitivity level 1 requirements during storage and handling procedures.
Select this component when a 30 V collector-emitter breakdown voltage is required for low-power NPN amplification tasks. The BC848B variant offers a higher minimum current gain compared to the BC848A grade, making it suitable for applications demanding consistent signal amplification without excessive base drive currents.
This part belongs to the BC846A–BC848C series of NPN general-purpose transistors produced by Diodes Incorporated. The series utilizes planar silicon technology within the SOT23 surface-mount footprint. It serves as the NPN counterpart to the BC856A–BC858C PNP transistor family, facilitating complementary push-pull or differential pair configurations in electronic designs.
Direct functional substitutes within the same manufacturer's portfolio include BC848B-7-F, which shares identical electrical specifications but utilizes a 7-inch reel packaging format.