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The BC848B RFG is a single NPN silicon small-signal bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It is housed in a surface-mount SOT-23 (TO-236AB) package with three terminals. The device supports a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. Key electrical characteristics include a minimum DC current gain of 200 at 2 mA and 5 V, a transition frequency of 100 MHz, and a maximum power dissipation of 200 mW. The saturation voltage is specified as 500 mV under standard test conditions.
Verify the specific suffix 'RFG' against the manufacturer's official documentation to confirm packaging details and compliance status. Ensure the component meets required environmental standards such as RoHS before integration. Cross-reference the datasheet revision date to validate parameter accuracy. Confirm availability through authorized distribution channels rather than secondary markets.
Select this component when a 45 V collector-emitter rating exceeds standard 30 V requirements while maintaining a compact footprint. The 100 mA current capacity suits moderate load driving tasks. Verify that the 200 mW power dissipation limit aligns with the thermal design constraints of the target printed circuit board layout.
This part belongs to the BC847/BC848 series of general-purpose NPN transistors. It serves as a complement to the PNP BC857/BC858 devices. The series is widely utilized in consumer electronics and industrial control systems requiring reliable small-signal performance in space-constrained designs.
Direct substitutes include BC848B LT1G from onsemi and BC848B from Diotec Semiconductor. Verify pinout compatibility and electrical ratings match the original design specifications before substitution.