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Product Detailed Parameters
- Description：TRANS 2NPN 30V 100MA SC88/SC70
- Series：-
- Mfr：onsemi
- Package：Bulk
- Transistor Type：2 NPN
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：380mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SC-88/SC70-6/SOT-363
- Grade：-
- Qualification：-
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Overview
The BC848BDW1T1 is a dual small-signal bipolar junction transistor array manufactured by onsemi. It integrates one NPN and one PNP transistor within a single SC-70 (SC-88, SOT-363) surface-mount package featuring six terminals. The device is designed for general-purpose amplification applications with a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 30 V. It exhibits a minimum DC current gain (hFE) of 200 at a collector current of 2 mA and a collector-emitter voltage of 5 V. The component supports a maximum power dissipation of 380 mW and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Integrates complementary NPN and PNP transistors in a compact dual configuration
- Provides high DC current gain suitable for low-power signal amplification
- Utilizes a lead-free SC-70 surface-mount package for automated assembly
Applications
- General-purpose amplifier circuits
- Switching applications in portable devices
- Signal processing in consumer electronics
Procurement Notes
Verify the specific suffix DW1T1 against the manufacturer's official documentation to confirm the tape-and-reel packaging format and lead finish specifications. Ensure that the ordering information matches the exact part number required for the intended design implementation.
Selection Notes
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Compare the hFE binning requirements against circuit sensitivity. Verify that the SC-70 thermal characteristics meet the system's power dissipation constraints under expected operating conditions.
Part Context
This part belongs to the BC848 series of small-signal transistors from onsemi. It serves as a dual-element alternative to using separate discrete NPN and PNP devices, reducing board space and simplifying assembly processes in compact electronic designs.
Replacement Considerations
Check for pin-compatible alternatives such as the BC848CDW1T1 or BC848DDW1T1 if different current gain bins are required. Verify electrical equivalence before substituting with parts from other manufacturers.
