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The BC848BE6327HTSA1 is a single NPN silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package designed for automated assembly. The device supports a maximum continuous collector current of 100 mA and withstands a collector-emitter voltage (VCEO) of 30 V. Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 450, a transition frequency (fT) of 250 MHz, and a power dissipation rating of 330 mW. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm lead-free compliance and tape-and-reel packaging specifications. Confirm that the component status remains active or check for obsolescence notices prior to finalizing design-in decisions. Ensure compatibility with standard SMD reflow soldering profiles defined for the SOT-23-3 package.
Select this component when a standard NPN transistor with moderate gain and high-frequency response is required in a minimal footprint. The 30 V breakdown voltage limits its use in higher voltage rails, making it ideal for low-voltage logic interfacing and analog signal conditioning where space constraints dictate the use of the SOT-23-3 package over larger alternatives.
This part belongs to the BC848 series of small-signal NPN transistors produced by Infineon Technologies. The series is widely recognized for its reliability in consumer electronics and industrial control systems. The E6327HTSA1 designation indicates specific manufacturing lot tracking, environmental compliance, and reel packaging configuration standardized for high-volume surface-mount production lines.
Cross-reference with other manufacturers' BC848B equivalents such as those from ON Semiconductor or STMicroelectronics. Verify pinout compatibility and ensure that hFE binning ranges align with circuit requirements before substituting.