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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SST3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SST3
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BC848BHZGT116 is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It operates with a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. The device features a DC current gain (hFE) ranging from 200 to 450 at 2 mA and 5 V. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 5 V, and a saturation voltage of 600 mV. Power dissipation is rated at 350 mW, with a transition frequency of 200 MHz. It is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- Automotive-grade reliability certified under AEC-Q101 standards
- High DC current gain range spanning 200 to 450
- Surface-mount construction in SOT-23-3 package
Applications
- General-purpose amplification in automotive circuits
- Switching applications requiring high gain
- Low-frequency signal processing
Procurement Notes
Verify the specific suffix GT116 against official ROHM documentation to confirm reel packaging and automotive qualification status. Ensure the component matches the required hFE binning specifications for the intended circuit design. Cross-reference the datasheet revision date to guarantee compatibility with current manufacturing standards and RoHS compliance requirements.
Selection Notes
Select this component when automotive qualification is mandatory for NPN switching or amplification tasks. The wide hFE range suits designs needing consistent gain without tight binning constraints. Consider the 350 mW power dissipation limit for thermal management in compact SOT-23-3 enclosures. Verify that the 30 V voltage rating aligns with the system's maximum operating conditions.
Part Context
This part belongs to the BC848 series of general-purpose NPN transistors. The HZG suffix indicates an automotive-grade variant compliant with AEC-Q101. It complements the PNP BC858BHZG within the same product family. The standard BC848B serves as the commercial counterpart without automotive certification.
Replacement Considerations
BC848BHZG is listed as an alias for this component. Standard BC848B variants lack AEC-Q101 qualification and are not suitable for automotive use. Other manufacturers' BC848B parts may match electrical specs but require verification of automotive grade status.
