BC848BMTF

Overview

The BC848BMTF is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a SOT-23 surface-mount package. It features a collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device offers a DC current gain (hFE) range of 200 to 450 at 2 mA and 5 V. Key electrical characteristics include a transition frequency of 300 MHz, a maximum power dissipation of 310 mW, and a junction temperature rating up to 150 °C.

Feature Summary

• Designed for switching and amplifier applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low noise performance

Applications

• General-purpose switching
• Amplifier circuits
• Thick and thin-film circuit integration

Procurement Notes

Verify the specific hFE classification suffix 'B' corresponds to the required gain range of 200 to 450. Confirm the '-M' indicates the SOT-23 package and '-TF' denotes tape and reel packing. Ensure the component meets RoHS compliance standards as specified in the datasheet. Validate that the absolute maximum ratings align with your circuit's operational stress limits.

Selection Notes

Select this component when a low-voltage NPN transistor with moderate gain is required. The BC848B variant provides a specific gain band suitable for general amplification. Consider the SOT-23 package for space-constrained designs. Verify thermal management requirements against the 310 mW dissipation limit and junction-to-ambient thermal resistance.

Part Context

This part belongs to the BC846/BC847/BC848/BC850 series of NPN epitaxial silicon transistors. The BC848 variant specifically offers a 30 V collector-emitter voltage rating. It serves as a complement to the PNP BC858B transistor. The series is designed for general-purpose use in consumer and industrial electronics.

Replacement Considerations

Compatible substitutes within the same family include BC848AMTF and BC848CMTF, which share identical packaging but differ in hFE gain classifications.