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The BC848BW-TP is an NPN bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in a surface-mount SOT-323 package. The device supports a maximum DC collector current of 100 mA with a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V. The emitter-base reverse voltage (VEBO) is rated at 6 V. Power dissipation is specified at 150 mW, with a transition frequency of 100 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix 'TP' indicates tape and reel packaging when sourcing. Confirm that the component matches the standard BC848B electrical characteristics provided in the manufacturer datasheet. Ensure the ordering information aligns with the required quantity per reel as defined by Micro Commercial Components specifications.
Select this component for low-power NPN applications requiring a 30 V rating. Compare against BC847BW-TP for higher voltage requirements or BC846AW-TP for different gain profiles. Ensure the SOT-323 footprint fits the target PCB layout constraints.
This part belongs to the BC848 series of small-signal transistors from Micro Commercial Components. It serves as a standard replacement for industry-generic BC848 devices. The BW variant typically denotes specific DC current gain binning compared to other sub-types within the same family.
BC848B-TP
The maximum collector-emitter voltage (VCEO) is 30 V.
The power dissipation is 150 mW.