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The BC848BW is a single NPN silicon small-signal bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It utilizes the SOT-323 surface-mount package, designated as UMT3 in JEITA standards. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. Key electrical characteristics include a DC current gain (hFE) ranging from 200 to 450 at a collector current of 2 mA. The component operates within a temperature range of -55°C to +150°C and features a power dissipation rating of 200 mW.
Verify the manufacturer marking on the component body to confirm it corresponds to Taiwan Semiconductor Corporation. Ensure the ordering suffix matches the specific tape-and-reel or cut-tape configuration required for your assembly line. Cross-reference the datasheet revision date with your design specifications to ensure compliance with current RoHS directives and material declarations.
Select this component when a compact NPN transistor with moderate gain is required for low-voltage signal handling. The SOT-323 package offers a smaller footprint compared to traditional SOT-23 packages. Consider the hFE binning requirements of your circuit design, as the 200-450 range provides flexibility for various biasing conditions without requiring tight tolerance components.
This part belongs to the widely used BC848 series of small-signal transistors. The 'B' suffix typically denotes a specific DC current gain bin, distinguishing it from variants like BC848A or BC848C which have different gain ranges. The 'W' often indicates the specific SOT-323 package style. This series is standard in consumer electronics for basic switching and amplification tasks.
Compatible substitutes include BC848BW from other manufacturers such as Diotec, ROHM, or Infineon, provided they adhere to the same SOT-323 pinout and electrical ratings. Verify that alternative sources offer the same hFE binning (200-450) to maintain circuit performance consistency.