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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SC70-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：150 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SC-70-3 (SOT323)
- Grade：-
- Qualification：-
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Overview
The BC848BWT1 is an NPN silicon general-purpose transistor from the BC846, BC847, and BC848 series by onsemi. It operates with a collector-emitter voltage of 30 V, collector-base voltage of 30 V, and emitter-base voltage of 5 V. The device supports a continuous collector current of 100 mA and total power dissipation of 150 mW at 25°C ambient temperature. DC current gain (hFE) ranges from 200 to 450 at IC = 2.0 mA and VCE = 5.0 V. Transition frequency is 100 MHz. Operating and storage temperatures span -55°C to +150°C.
Feature Summary
- Designed for low-power surface mount applications in SC-70/SOT-323 packages
- Provides high DC current gain suitable for general-purpose amplifier circuits
- Features robust thermal characteristics with junction-to-ambient resistance of 833 °C/W
Applications
- General purpose amplifier applications
- Low power surface mount circuit designs
- Switching applications requiring small signal amplification
Procurement Notes
Verify the specific ordering suffix matches the required package type and shipping quantity. Confirm that the component meets RoHS compliance standards if lead-free packaging is mandated for the assembly process. Ensure the datasheet revision aligns with the manufacturing batch specifications for accurate electrical parameter validation during integration.
Selection Notes
Select this component when a 30 V NPN transistor with moderate current handling is required. The BC848B variant offers a defined hFE range of 200 to 450, distinguishing it from lower or higher gain alternatives within the same series. Consider the SOT-323 footprint constraints and thermal dissipation limits relative to the PCB layout environment.
Part Context
This part belongs to the BC846, BC847, and BC848 series of NPN silicon transistors manufactured by onsemi. These devices are engineered for general-purpose use and are housed in the SC-70 (SOT-323) package. The series complements the PNP BC858 counterparts, providing a complete solution for complementary symmetry circuits in compact electronic designs.
Replacement Considerations
BC848BWT1G serves as the lead-free equivalent within the same series. Other manufacturers produce pin-compatible variants such as BC848BW, but verification of electrical parameters against the official onsemi datasheet is required before substitution.
FAQ
What is the maximum collector-emitter voltage for the BC848B?
The maximum collector-emitter voltage (VCEO) for the BC848B is 30 V.
What is the DC current gain range for the BC848B variant?
The DC current gain (hFE) for the BC848B ranges from 200 to 450 when measured at IC = 2.0 mA and VCE = 5.0 V.
Which package style does the BC848BWT1 utilize?
The BC848BWT1 utilizes the SC-70 package, also known as SOT-323, which is designated as CASE 419.
