BC848BWT106

$0.45

Description：TRANS NPN 30V 0.1A UMT3
Series：-

SKU:d95cf554facf Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 30V 0.1A UMT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
Power - Max：200 mW
Frequency - Transition：200MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：UMT3
Grade：-
Qualification：-

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BC848BWT106

Overview

The BC848BWT106 is a single NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes an SOT-323 (UMT3) surface-mount package designed for general-purpose amplification applications. The device supports a maximum collector current of 100 mA and withstands a collector-emitter voltage of 30 V. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 450 at 2 mA, a transition frequency of 200 MHz, and a power dissipation capacity of 200 mW. The component operates within a temperature range up to +150°C.

Feature Summary

Single NPN configuration in a compact SOT-323 surface-mount package
High DC current gain with a minimum specification of 200
Transition frequency of 200 MHz for signal amplification
Maximum operating junction temperature of +150°C

Applications

General-purpose signal amplification circuits
Switching applications requiring low-power control
Consumer electronics signal processing stages

Procurement Notes

Verify the specific manufacturer designation as ROHM Semiconductor when sourcing this part number. Confirm that the package type matches the required SOT-323 footprint for PCB layout compatibility. Ensure the hFE binning requirements align with circuit design specifications, noting the standard range provided in official documentation. Cross-reference the datasheet for thermal management guidelines related to the 200 mW power dissipation limit.

Selection Notes

Select this component for designs requiring a small-form-factor NPN transistor with moderate gain characteristics. The SOT-323 package offers space efficiency compared to larger through-hole alternatives. Consider the 200 MHz bandwidth when evaluating high-frequency performance needs. Verify that the 30 V voltage rating meets the circuit's maximum operational limits under all conditions.

Part Context

This component belongs to the BC848BW series of general-purpose amplification transistors. It is designed for surface-mount technology integration into modern electronic assemblies. The product line emphasizes energy efficiency and reliability for consumer and industrial applications. It serves as a standard discrete semiconductor solution for basic switching and amplification tasks.