BC848CDW1T1G

Overview

The onsemi BC848CDW1T1G is a dual NPN general-purpose transistor housed in an SOT-363 (SC-88) surface-mount package. It features a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA per device. The component provides a minimum DC current gain of 420 at 2 mA and 5 V, with a transition frequency of 100 MHz. Total power dissipation is rated at 380 mW, and the operating junction temperature range spans from -55 °C to +150 °C.

Feature Summary

• Dual NPN configuration within a compact SOT-363 package for low-power surface mount applications
• High DC current gain suitable for general-purpose amplifier circuits
• Lead-free, halogen-free, and RoHS compliant construction

Applications

• General purpose amplifier applications
• Low power surface mount circuit designs

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation before procurement. Confirm that the component meets all required automotive or industrial qualification standards if applicable to the design. Ensure the package dimensions align with the PCB footprint requirements during the layout phase.

Selection Notes

Select this component when a dual NPN configuration is required in a small form factor. Verify that the 30 V breakdown voltage and 100 mA current limits satisfy the circuit demands. Consider the thermal resistance and power dissipation capabilities relative to the expected ambient operating conditions.

Part Context

This part belongs to the BC848 series of dual general-purpose transistors manufactured by onsemi. It shares the same physical package and basic electrical characteristics as other variants within the BC846/BC847/BC848 family, differentiated primarily by their voltage ratings and gain specifications.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.