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The BC848CPDW1T1 is a dual general-purpose transistor array manufactured by onsemi, housed in an SOT-363 surface-mount package. It integrates one NPN and one PNP silicon transistor designed for low-power applications. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 30 V for both polarities. Electrical characteristics include a minimum DC current gain (hFE) of 420 at IC = 2.0 mA and VCE = 5.0 V, with a transition frequency (fT) of 100 MHz. Total device dissipation is rated at 380 mW, and the operating junction temperature range spans from -55°C to +150°C.
Verify component authenticity through authorized distribution channels. Confirm that the ordering suffix matches the specific tape and reel packaging requirements for automated assembly processes. Ensure compliance with RoHS directives if lead-free specifications are required for the manufacturing environment.
Select this component when a matched NPN/PNP pair is required in a minimal footprint. Verify that the 30 V collector-emitter voltage rating meets the circuit's maximum supply requirements. Ensure the 100 mA continuous collector current limit accommodates the peak load demands of the intended application without exceeding thermal constraints.
This part belongs to the BC846/BC847/BC848 series of dual transistors. The 'C' designation indicates a specific binning grade for DC current gain, distinguishing it from the 'B' grade variants. The 'PDW1T1' suffix denotes the SOT-363 package type and standard tape and reel shipping quantity.
Compatible substitutes include BC847CPDW1T1 and BC846CPDW1T1 from the same manufacturer family. Cross-manufacturer equivalents must be verified for pin compatibility and electrical parameter alignment.