BC848CWH6327XTSA1

BC848CWH6327XTSA1

  • Description:TRANS NPN 30V 0.1A PG-SOT323
  • Series:-

SKU:da37faf2e126 Category: Brand:

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Product Detailed Parameters

  • Description:TRANS NPN 30V 0.1A PG-SOT323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

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BC848CWH6327XTSA1

Overview

The BC848CWH6327XTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 30 V and a maximum continuous collector current of 100 mA. The device operates within a temperature range of -65 °C to +150 °C and has a power dissipation rating of 330 mW. It utilizes a DC current gain (hFE) ranging from 420 to 800, with a transition frequency of 250 MHz. The component is housed in a surface-mount SOT-323-3 package.

Feature Summary

  • NPN single-transistor configuration for general-purpose switching
  • High DC current gain suitable for signal amplification
  • Wide operating temperature range for environmental stability

Applications

  • General-purpose switching circuits
  • Signal amplification stages
  • Low-power control applications

Procurement Notes

Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the part number matches the exact manufacturer designation to avoid counterfeit components. Cross-reference the datasheet for any recent lifecycle status changes or alternative sourcing recommendations.

Selection Notes

Select this component when an NPN transistor with high current gain and low voltage ratings is required. The SOT-323-3 package is ideal for space-constrained designs. Consider the 30 V breakdown voltage and 100 mA current limit during circuit design to ensure operation within safe limits. Verify thermal management requirements based on the 330 mW power dissipation capability.

Part Context

This part belongs to the BC848 series of small-signal NPN transistors. It is designed for use in consumer electronics and industrial equipment where compact size and reliable performance are essential. The silicon technology ensures consistent electrical characteristics across production batches.

Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Generic replacements may not match the specific hFE binning or package dimensions.

BC848CWH6327XTSA1BC848CWH6327XTSA1

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