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The BC848CWH6327XTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 30 V and a maximum continuous collector current of 100 mA. The device operates within a temperature range of -65 °C to +150 °C and has a power dissipation rating of 330 mW. It utilizes a DC current gain (hFE) ranging from 420 to 800, with a transition frequency of 250 MHz. The component is housed in a surface-mount SOT-323-3 package.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm RoHS compliance and tape-and-reel packaging specifications. Ensure the part number matches the exact manufacturer designation to avoid counterfeit components. Cross-reference the datasheet for any recent lifecycle status changes or alternative sourcing recommendations.
Select this component when an NPN transistor with high current gain and low voltage ratings is required. The SOT-323-3 package is ideal for space-constrained designs. Consider the 30 V breakdown voltage and 100 mA current limit during circuit design to ensure operation within safe limits. Verify thermal management requirements based on the 330 mW power dissipation capability.
This part belongs to the BC848 series of small-signal NPN transistors. It is designed for use in consumer electronics and industrial equipment where compact size and reliable performance are essential. The silicon technology ensures consistent electrical characteristics across production batches.
Consult official Infineon substitution guides for verified alternatives. Generic replacements may not match the specific hFE binning or package dimensions.