BC849AMTF

Description：TRANS NPN 30V 0.1A SOT-23-3
Series：-

SKU:5c1fc79cd92a Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 30V 0.1A SOT-23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
Power - Max：310 mW
Frequency - Transition：300MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3
Grade：-
Qualification：-

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BC849AMTF

Overview

The BC849AMTF is an NPN epitaxial silicon transistor from the BC846-BC850 series, designed for switching and amplifier applications. It features a collector-emitter voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and a maximum DC collector current (IC) of 100 mA. The device offers a DC current gain (hFE) range of 110 to 220 in the 'A' classification, with a typical value of 800 at IC=2mA. Key electrical parameters include a collector-emitter saturation voltage of 250 mV at IC=10mA, a transition frequency (fT) of 300 MHz, and a noise figure of 1.2 dB. Power dissipation is rated at 310 mW.

Feature Summary

Low noise performance suitable for sensitive signal amplification
NPN epitaxial silicon planar design for high reliability
Optimized for automatic insertion in thick and thin-film circuits

Applications

General purpose amplifier circuits
Electronic switching applications
Thick and thin-film circuit integration

Procurement Notes

Verify that the ordering suffix 'M' corresponds to the SOT-23 package and 'TF' indicates tape and reel packaging as specified in the datasheet. Confirm the 'A' suffix denotes the specific hFE binning range of 110 to 220. Ensure the component source is an authorized distributor to guarantee authenticity and traceability, as counterfeiting policies are strictly enforced by the manufacturer.

Selection Notes

Select this component when a low-noise NPN transistor with a 30 V collector-emitter voltage rating is required. The 'A' classification provides a guaranteed minimum hFE of 110, making it suitable for applications requiring consistent gain characteristics. Consider the 300 MHz transition frequency for high-frequency signal processing tasks within the specified power dissipation limits.

Part Context

This part belongs to the BC846-BC850 family of NPN general-purpose transistors manufactured by Fairchild Semiconductor, now part of onsemi. The series includes variants with different voltage ratings and gain classifications. The BC849 specifically targets low-noise applications compared to other members like the BC846 or BC847.

Replacement Considerations

Compatible substitutes include BC849BMTF and BC849CMTF from the same series, offering higher hFE ranges. Other manufacturers may offer pin-compatible equivalents in SOT-23 packages, but verify voltage ratings and noise figures match the original specifications.