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The BC849B-QR is an NPN general-purpose bipolar junction transistor manufactured by Nexperia. It is housed in a SOT-23 (TO-236AB) surface-mount package and is qualified to the AEC-Q101 automotive standard. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 30 V. Key electrical parameters include a DC current gain ranging from 200 to 450 at 2 mA, a transition frequency of 100 MHz, and a power dissipation capacity of 250 mW. It operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm the exact binning and packaging configuration. Ensure that the component meets the required AEC-Q101 qualification standards for your target application. Cross-reference the datasheet specifications with your system requirements before finalizing procurement decisions.
Select this component when an NPN transistor with automotive certification is required for compact designs. It serves as a suitable alternative for general-purpose switching and amplification tasks where high gain and small form factors are prioritized over high-voltage or high-current handling capabilities.
This part belongs to the BC849 series of NPN transistors produced by Nexperia. The series is designed for general-purpose use in consumer and industrial electronics. The BC849B variant specifically offers a defined current gain range, making it distinct from other gain bins within the broader product family.
Direct substitutes include the BC849B,115 and BC849BW,115. Verify pinout compatibility and thermal characteristics when replacing components in existing designs to ensure proper functionality.