BC849B

BC849B

$0.09
  • Description:TRANS NPN 30V 0.1A SOT23-3
  • Series:-

SKU:f721783c628f Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 0.1A SOT23-3
  • Series:-
  • Mfr:Diotec Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:250 mW
  • Frequency - Transition:300MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BC849B

Overview

The Diotec Semiconductor BC849B is a general-purpose NPN silicon epitaxial planar transistor housed in an SOT-23 surface-mount package. It features a collector-emitter voltage (VCEO) of 30 V and a maximum DC collector current (IC) of 100 mA. The device provides three distinct DC current gain (hFE) groups: Group A (180–290), Group B (270–520), and Group C (420–800). Maximum power dissipation is rated at 250 mW for industrial grades and 200 mW for commercial (-C) variants, with a junction temperature range of -55°C to +150°C.

Feature Summary

  • Offers three selectable DC current gain groups for precise amplifier biasing
  • Utilizes gold bond wires for standard industrial and AEC-Q101 grades
  • Complies with RoHS directives without exemptions and REACH regulations

Applications

  • Signal processing circuits
  • Electronic switching applications
  • General-purpose amplification stages

Procurement Notes

Verify the specific suffix to confirm the manufacturing grade. The absence of a suffix indicates Industrial grade, while the -C suffix denotes Commercial grade. Confirm whether the -Q or -AQ suffixes are required for AEC-Q101 automotive compliance. Ensure the ordering code matches the desired hFE group (A, B, or C) as these define the electrical performance characteristics.

Selection Notes

Select the BC849B when a 30 V collector-emitter breakdown voltage is sufficient for the application. Choose the appropriate hFE group based on the required signal amplification linearity. Verify that the 100 mA continuous collector current meets the load requirements. Consider the thermal resistance limits if operating near the maximum power dissipation threshold.

Part Context

This component belongs to the BC846 through BC850 series of SMD universal NPN transistors manufactured by Diotec Semiconductor. The series shares common mechanical dimensions and packaging standards but varies in voltage ratings and gain specifications. The BC849 variant specifically targets lower voltage applications compared to the higher-voltage BC846 or BC847 models within the same family.

Replacement Considerations

  • BC849BW-AU_B0_10001

FAQ

What is the difference between the BC849B and BC849B-C?

The BC849B represents the Industrial grade with a maximum power dissipation of 250 mW and utilizes gold bond wires. The BC849B-C is the Commercial grade, which has a reduced maximum power dissipation of 200 mW and uses copper bond wires.

Does the BC849B meet automotive standards?

Standard versions do not inherently meet automotive standards. Only parts with the -Q (compliant) or -AQ (qualified) suffixes adhere to the AEC-Q101 standard.

What is the marking code for this component?

The marking code for the BC849B is '1F'.

BC849BBC849B
$0.09
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