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The BC849B,215 is an NPN general-purpose transistor manufactured by Nexperia USA Inc. It is housed in a small SOT23 surface-mounted device plastic package with three terminals. The component supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. It features a DC current gain (hFE) ranging from 200 to 450 at 2 mA and 5 V. The device has a total power dissipation of 250 mW and operates within a junction temperature range of -65 °C to 150 °C. It is qualified according to the AEC-Q101 standard.
Verify the specific ordering suffix matches the required packaging configuration, as variations exist between tape-and-reel and cut-tape formats. Confirm that the AEC-Q101 qualification status aligns with your target application's reliability requirements. Ensure the SOT23 footprint dimensions are compatible with your PCB layout constraints before finalizing procurement.
Select this component when a low-voltage, low-current NPN transistor is required for general-purpose tasks. The BC849B offers a high DC current gain suitable for amplification stages. Consider the BC859B if a PNP complement is needed. Verify thermal management capabilities against your expected power dissipation levels, particularly in enclosed environments.
This part belongs to the BC8xx series of general-purpose transistors produced by Nexperia. The BC849B specifically denotes the NPN variant with a defined current gain range. It serves as a fundamental discrete semiconductor component used in various electronic circuits requiring signal amplification or switching functions.
BC849BW,115
Pin 1 is the Base, Pin 2 is the Emitter, and Pin 3 is the Collector.
Yes, the product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.
The total power dissipation is 250 mW at an ambient temperature of 25 °C.