SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC849B_R1_00001 is a single NPN silicon small-signal bipolar junction transistor manufactured by Panjit International Inc. It operates with a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device features a transition frequency of 100 MHz and a maximum power dissipation of 330 mW. DC current gain (hFE) is specified at a minimum of 200 when tested at 2 mA and 5 V. The component is housed in an SOT-23 surface-mount package and supports a junction temperature range from -55°C to +150°C.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm exact reel specifications and manufacturing lot details. Ensure compatibility with standard SOT-23 footprints during PCB layout. Confirm RoHS compliance status through the latest environmental declaration provided by the manufacturer prior to final procurement authorization.
Select this component for applications requiring low-voltage NPN switching with moderate current handling capabilities. The 30 V rating suits low-power logic interfacing. Verify that the 100 mA collector current meets load requirements. Consider the SOT-23 package constraints for thermal management in dense layouts compared to larger packages.
This part belongs to the BC849 series of NPN general-purpose transistors produced by Panjit. It serves as a surface-mount alternative to through-hole variants, facilitating automated assembly processes. The device is designed for use in portable electronics and communication equipment where compact form factors are critical.
BC849B-AU_R1_000A1 is documented as a parameter-equivalent substitute by Panjit.