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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BC849BLT3 is an NPN silicon general-purpose transistor from the BC846ALT1 series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 30 V and a collector-base voltage (VCBO) of 30 V. The device supports a continuous collector current of 100 mA with a maximum power dissipation of 225 mW in standard conditions. It operates within a junction temperature range of -55°C to +150°C. The component utilizes an SOT-23 package and offers a minimum DC current gain (hFE) of 200 at IC = 2.0 mA.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplification
- High DC current gain suitable for low-current switching applications
- ESD protection rated above 4000 V via Human Body Model
Applications
- General purpose amplifier circuits
- Low-current switching applications
- Signal processing stages
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Ensure the component meets RoHS compliance requirements if applicable to the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Selection Notes
Select this component when a 30 V collector-emitter rating and 100 mA continuous current capability are required. The high hFE characteristic makes it suitable for applications demanding significant signal amplification with minimal base drive current. Consider thermal derating factors if operating near maximum power dissipation limits in confined PCB layouts.
Part Context
This device belongs to the BC846ALT1 series, which includes various voltage and gain combinations of NPN transistors. The 'B' designation indicates a specific DC current gain binning, while the 'LT3' suffix typically denotes a tape and reel packaging format with a specific quantity per reel. These components share common electrical characteristics within their respective voltage classes.
Replacement Considerations
BC849BLT1G
FAQ
What is the maximum collector-emitter voltage for the BC849BLT3?
The maximum collector-emitter voltage (VCEO) is 30 V.
Does the BC849BLT3 offer ESD protection?
Yes, the device has an ESD rating greater than 4000 V according to the Human Body Model.
What is the minimum DC current gain specified for this part?
The minimum DC current gain (hFE) is 200, measured at IC = 2.0 mA and VCE = 5.0 V.
