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Product Detailed Parameters
- Description：TRANS NPN 30V 0.1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：30 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BC849BMTF is an NPN epitaxial silicon transistor from the BC846-BC850 series, manufactured by onsemi. It features a collector-emitter voltage (VCEO) of 30 V and a maximum DC collector current of 100 mA. The device operates within a junction temperature range of -65 °C to +150 °C and dissipates up to 310 mW. It utilizes an SOT-23 package with Base-Emitter-Collector pin configuration. Electrical characteristics include a minimum DC current gain (hFE) of 200 at IC=2mA, VCE=5V, and a transition frequency (fT) of 300 MHz.
Feature Summary
- Designed for low-noise applications suitable for sensitive signal processing
- Complements the BC856 through BC860 PNP transistor series
- Optimized for automatic insertion in thick and thin-film circuits
Applications
- General purpose amplifier circuits
- Electronic switching applications
- Low noise pre-amplification stages
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels due to industry counterfeiting risks. Confirm that the ordering suffix matches the required hFE classification and tape & reel packaging specifications. Ensure compliance with RoHS directives and verify storage conditions align with the specified temperature limits before integration into production lines.
Selection Notes
Select this component when a high-gain NPN transistor with low noise characteristics is required. The BC849B variant specifically offers an hFE range of 200 to 450, distinguishing it from lower gain variants. Consider the 30 V collector-emitter rating and 100 mA current limit against circuit requirements. The SOT-23 package provides a compact footprint suitable for space-constrained surface mount designs.
Part Context
This part belongs to the BC846-BC850 family of NPN epitaxial silicon transistors originally developed by Fairchild Semiconductor and now produced by onsemi. The series includes multiple voltage ratings and hFE classifications. The BC849B variant specifically targets applications requiring moderate voltage handling combined with higher current gain compared to standard general-purpose transistors.
Replacement Considerations
Compatible substitutes include BC849B from Nexperia and Panasonic. Verify pinout compatibility and electrical parameter alignment, particularly the 30 V VCEO rating and hFE classification, before substituting.
