BC849BW RFG

BC849BW RFG

$0.15
  • Description:TRANS NPN 30V 0.1A SOT-323
  • Series:-

SKU:82c774bccb9b Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 30V 0.1A SOT-323
  • Series:-
  • Mfr:Taiwan Semiconductor Corporation
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

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BC849BW RFG

Overview

The BC849BW RFG is a single NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It utilizes an SOT-323 surface-mount package and operates with a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. The device features a transition frequency of 100 MHz and a maximum power dissipation of 200 mW. DC current gain is specified at a minimum of 200 when tested at 2 mA base current and 5 V collector-emitter voltage. The saturation voltage is limited to 600 mV under conditions of 5 mA base current and 100 mA collector current. Leakage current remains within 100 nA, and the junction temperature range spans from -55°C to 150°C.

Feature Summary

  • NPN epitaxial silicon planar design suitable for general-purpose amplifier applications
  • Surface-mount construction in a compact SOT-323 package
  • Qualified for lead-free processing and compliant with EU RoHS directives
  • Utilizes halogen-free green molding compound material

Applications

  • General-purpose signal amplification circuits
  • Switching applications requiring low power consumption
  • Audio pre-amplifier stages
  • Logic interface buffering

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging configuration. Confirm that the component meets required environmental standards such as RoHS compliance before integration. Check for any recent product change notices regarding molding compounds or manufacturing site updates. Ensure compatibility with standard surface-mount assembly processes and reflow temperature profiles specified in the datasheet.

Selection Notes

Select this component for designs requiring a small-form-factor NPN transistor with moderate voltage handling capabilities. The SOT-323 package offers space efficiency for portable electronics. Consider the 100 MHz transition frequency for high-speed switching or audio frequency amplification tasks. Evaluate thermal management requirements given the 200 mW power dissipation limit in the specified package type.

Part Context

This part belongs to the BC849 series of small-signal NPN transistors produced by Taiwan Semiconductor Corporation. The series includes variants with different gain ranges and voltage ratings. The BC849BW specifically denotes the medium-gain variant within this family. These devices are widely used in consumer electronics and industrial control systems where reliable switching and amplification are required in compact packages.

Replacement Considerations

Cross-reference with other manufacturers' BC849BW equivalents such as Nexperia BC849BW,115 or Diotec BC849B. Verify pinout compatibility and electrical parameter overlaps before substitution. Ensure the alternative component meets the same package and environmental requirements.

BC849BW RFGBC849BW RFG
$0.15
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