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The BC849BW,115 is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package. Key electrical parameters include a maximum collector current of 100 mA, a collector-emitter voltage of 30 V, and a collector-base voltage of 30 V. The device features a minimum DC current gain of 200 at 2 mA and 5 V, with a transition frequency of 100 MHz. Power dissipation is rated at 200 mW, and the operating temperature range spans from -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm package type and tape-and-reel specifications. Ensure the component meets AEC-Q101 requirements if intended for automotive use. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and current production status before finalizing procurement orders.
Select this component when a low-voltage NPN transistor with high gain is required in a small form factor. The 30 V rating suits low-power logic and audio applications. Compare against BC846 or BC847 variants if higher voltage ratings are necessary. Verify thermal management capabilities within the SOT-323 package constraints for the specific circuit design.
This part belongs to the BC849 series of general-purpose NPN transistors. It serves as the NPN complement to the BC859 PNP transistor. The 'BW' designation indicates a specific DC current gain binning selection. The ',115' suffix denotes the standard reel packaging format used by Nexperia for distribution.
BC849B,115
Yes, the BC849BW variant is qualified according to AEC-Q101 and is recommended for use in automotive applications.
The maximum collector-emitter voltage (VCEO) is 30 V.
The complementary PNP transistor for the BC849 series is the BC859.