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The BC849BW,135 is an NPN general-purpose bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a compact SOT-323 (SC-70) surface-mount package with three leads. The device supports a maximum DC collector current of 100 mA and offers a collector-emitter voltage rating of 30 V. Key electrical parameters include a collector-base voltage of 30 V, an emitter-base voltage of 5 V, and a power dissipation capacity of 200 mW. The component features a gain-bandwidth product of 100 MHz and operates within a temperature range from -65 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm package type and binning. Ensure the ordering code matches the required gain class and reel specifications. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component for applications requiring low-voltage NPN switching in small form factors. Compare the 30 V rating and 100 mA limit against circuit requirements. Consider the SOT-323 footprint constraints and thermal dissipation limits relative to the intended load conditions and ambient operating environment.
This transistor belongs to the BC849 series of NPN general-purpose devices. It shares functional similarities with other members like the BC849C but differs in package geometry and gain characteristics. The series is designed for cost-effective mass production in consumer electronics and industrial control systems requiring reliable signal processing.
Official substitutes include the BC849B,115 which shares the same electrical characteristics but may differ in tape and reel packaging configuration. Verify pinout compatibility and thermal resistance values when transitioning between different supplier lot codes or minor revision variants.