BC849C-AP

Overview

The BC849C-AP is an NPN general-purpose bipolar junction transistor manufactured by Micro Commercial Components. It utilizes silicon technology and is housed in a surface-mount SOT-23-3 package. The device supports a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA. Key electrical characteristics include a collector-base voltage of 30 V, an emitter-base voltage of 6 V, and a power dissipation rating of 225 mW. The component operates within a temperature range of -55°C to +150°C.

Feature Summary

• NPN polarity configuration for signal amplification and switching
• Small form factor SOT-23-3 surface-mount packaging
• Silicon-based construction for reliable operation

Applications

• General purpose switching circuits
• Amplifier stages
• Low voltage logic interfacing

Procurement Notes

Verify the specific suffix 'AP' against official MCC documentation to confirm exact binning or testing parameters. Ensure the ordering part number matches the required gain group and voltage specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet before finalizing procurement plans.

Selection Notes

Select this component for applications requiring low-current NPN switching with a 30V voltage rating. Compare the 225mW power dissipation limit against thermal requirements. Verify that the SOT-23-3 footprint aligns with the PCB layout constraints and that the hFE characteristics meet the circuit design needs.

Part Context

This part belongs to the BC849 series of small-signal NPN transistors. It serves as a complement to PNP devices like the BC859 series. The component is designed for use in portable electronics and consumer goods where space efficiency and low power consumption are critical design factors.

Replacement Considerations

Cross-reference with Nexperia BC849C for pin-compatible alternatives. Verify that substitute parts maintain identical voltage ratings and current capabilities.