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The Diotec Semiconductor BC849C is a surface-mount NPN general-purpose transistor housed in an SOT-23 (TO-236) package. It features a collector-emitter voltage of 30 V, a maximum DC collector current of 100 mA, and a power dissipation rating of 250 mW at 25°C ambient temperature. The device belongs to the 'C' gain group, providing a minimum DC current gain (hFE) of 420 when measured at IC = 2 mA and VCE = 5 V. It operates within a junction temperature range of -55°C to +150°C.
Verify that the ordering suffix matches the required reliability grade. The '-C' suffix designates the commercial grade variant, which utilizes copper bond wires and has a lower power dissipation limit compared to industrial or automotive grades. Confirm compliance requirements against specific project standards before finalizing procurement orders.
Select this component for standard commercial applications requiring high DC current gain. Ensure the thermal environment supports the specified 250 mW power dissipation limit. Verify that the 30 V collector-emitter breakdown voltage meets the circuit's maximum operating requirements. Consider alternative gain groups if higher or lower amplification factors are necessary.
This part belongs to the BC846 through BC850 series of universal NPN transistors manufactured by Diotec Semiconductor. These components share identical pinouts and mechanical dimensions but differ in voltage ratings and current gain classifications. The BC849C specifically offers the lowest voltage rating within the series while maintaining the highest gain classification.
BC849B/-AQ
The BC849C is the commercial grade version utilizing copper bond wires with a 250 mW power dissipation rating. The BC849Q is AEC-Q101 compliant, uses gold bond wires, and supports a higher power dissipation of 300 mW.
The 'C' suffix indicates the commercial grade version of the transistor, which is characterized by the use of copper bond wires instead of gold.