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The BC849CMTF is an NPN epitaxial silicon transistor in a SOT-23 package. It features a collector-emitter voltage of 30V, a collector-base voltage of 30V, and an emitter-base voltage of 5V. The maximum DC collector current is 100mA with a power dissipation of 310mW. The device has a minimum DC current gain (hFE) of 420 at 2mA and 5V. The transition frequency is 300MHz. Operating temperature ranges from -65°C to 150°C.
Verify the datasheet revision B1 specifications against the manufacturer's official documentation. Confirm that the suffix MTF corresponds to the SOT-23 tape and reel packaging format. Ensure compliance with RoHS directives and check for any specific handling requirements during surface mount assembly processes.
Select this component when a low-noise NPN transistor with high current gain is required. The 30V rating suits general-purpose applications. Verify that the 310mW power dissipation meets thermal constraints. Consider the SOT-23 footprint compatibility with existing PCB layouts.
This part belongs to the BC846-BC850 series of NPN epitaxial silicon transistors. The 'C' suffix indicates a specific hFE classification range of 420 to 800. The 'M' denotes the SOT-23 package type, while 'TF' specifies tape and reel packaging. This series complements the BC856 through BC860 PNP counterparts.
Compatible substitutes include BC849C,215 from Nexperia and BC849CW from Diotec Semiconductor. Verify pinout configurations and electrical parameters match before substitution.