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The BC849CW is a single NPN general-purpose bipolar junction transistor manufactured by Diotec Semiconductor. It utilizes an SOT-323 surface-mount package and supports a maximum collector current of 100 mA with a power dissipation rating of 200 mW. The device features a collector-emitter breakdown voltage (VCEO) of 30 V, a collector-base voltage (VCBO) of 30 V, and an emitter-base voltage (VEBO) of 5 V. Electrical characteristics include a DC current gain (hFE) ranging from 420 to 800 at IC = 2 mA and VCE = 5 V, a transition frequency (fT) of 100 MHz, and a collector-emitter saturation voltage (VCEsat) of up to 600 mV at IC = 100 mA and IB = 5 mA. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix configuration against project requirements before ordering. The 'C' suffix designates commercial grade availability. Confirm that the standard packaging format aligns with assembly line capabilities. Ensure compliance with relevant environmental standards such as RoHS and REACH during component sourcing. Validate datasheet specifications against final application constraints.
Select this component when a low-voltage NPN transistor with high current gain is required in a compact SOT-323 footprint. The 30 V collector-emitter rating limits suitability for higher voltage environments. Consider the specified hFE ranges to ensure adequate drive capability within the target circuit design parameters.
This part belongs to the BC846W through BC849W series of SMD general-purpose NPN transistors. The series offers varying voltage ratings across different model numbers while maintaining consistent mechanical dimensions and thermal characteristics. The BC849CW specifically represents the 30 V variant within this family.
BC849AW
The '-C' suffix indicates that the component is a commercial grade version.
The maximum collector-emitter voltage (VCEO) is 30 V.
No, the BC849CW is a commercial grade device. Automotive qualification requires the '-Q' or '-AQ' suffix variants.