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The BC849CW,115 is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package with three terminals. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical parameters include a collector-base voltage of 50 V, an emitter-base voltage of 5 V, and a power dissipation rating of 200 mW. It features a transition frequency of 100 MHz and a minimum DC current gain of 420 at 2 mA and 5 V. The component operates within a temperature range of -65 °C to +150 °C.
Verify the specific ordering code BC849CW,115 against official Nexperia documentation to confirm the SOT-323 package and AEC-Q101 qualification status. Ensure compatibility with target environmental regulations such as REACH and RoHS before integration. Confirm that the 45 V collector-emitter voltage rating meets the circuit requirements. Validate the 200 mW power dissipation limit under expected operating conditions.
Select this component for applications requiring low noise characteristics in audio or signal paths. The AEC-Q101 qualification makes it suitable for automotive environments where reliability is critical. Compare the 45 V breakdown voltage against circuit demands. Consider the SOT-323 footprint for space-constrained designs. Verify thermal management capabilities given the 200 mW dissipation limit.
This part belongs to the Nexperia BC849 series of general-purpose NPN transistors. It is designed for low current and low voltage switching and amplification tasks. The PNP complement for this device is the BC859W. The component is widely used in consumer electronics and automotive systems due to its small form factor and robust qualification standards.
The BC859W serves as the PNP complement within the same family. No direct public substitute part numbers are confirmed for replacement purposes.