BC849CWE6327HTSA1

Description：TRANS NPN 30V 0.1A PG-SOT323
Series：-

SKU:234df42b53c6 Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 30V 0.1A PG-SOT323
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：250 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：PG-SOT323
Grade：-
Qualification：-

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BC849CWE6327HTSA1

Overview

The BC849CWE6327HTSA1 is a single NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-363-6 surface-mount package designed for high-density circuit applications. The device supports a maximum continuous collector current of 200 mA and operates with a collector-emitter voltage rating of 30 V. Key electrical characteristics include a collector-base voltage of 30 V, an emitter-base voltage of 6 V, and a power dissipation capacity of 330 mW. The component features a transition frequency of 250 MHz and a DC current gain range from 420 to 800. It functions reliably within a temperature range of -65 °C to +150 °C.

Feature Summary

High DC current gain ranging from 420 to 800 for sensitive signal amplification
Compact SOT-363-6 surface-mount package optimized for space-constrained designs
Wide operating temperature range extending up to +150 °C

Applications

General-purpose small-signal amplification
Switching circuits requiring low voltage operation
Audio pre-amplifier stages

Procurement Notes

Verify the specific suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging and automotive-grade qualification status. Confirm RoHS compliance details directly from the manufacturer datasheet. Ensure the ordering part number matches the exact pinout and configuration required for the target PCB layout before finalizing procurement.

Selection Notes

Select this component when a single NPN transistor with high current gain (up to 800) is required in a compact SOT-363-6 footprint. It is suitable for applications needing a 30 V collector-emitter breakdown voltage and 200 mA continuous current capability. Consider the 330 mW power dissipation limit and the wide temperature range when designing for thermal management in dense assemblies.

Part Context

This part belongs to the BC849 series of NPN silicon transistors from Infineon Technologies. The BC849 series is widely recognized for its high gain and low noise characteristics, making it a standard choice for general-purpose analog switching and amplification tasks. The E6327HTSA1 suffix indicates specific manufacturing and packaging attributes defined by Infineon.