BC849CWH6327XTSA1

$0.03

Description：TRANS NPN 30V 0.1A PG-SOT323
Series：-

SKU:c1cd6417bde2 Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 30V 0.1A PG-SOT323
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：30 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：250 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：PG-SOT323
Grade：-
Qualification：-

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BC849CWH6327XTSA1

Overview

The BC849CWH6327XTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a SOT-363-6 surface-mount package. The device supports a maximum collector-emitter voltage of 30 V and a continuous DC collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 420 and a transition frequency of 250 MHz. It operates within a temperature range of -65 °C to +150 °C with a power dissipation rating of 330 mW.

Feature Summary

High DC current gain for effective signal amplification
Wide operating temperature range for environmental stability
Compact surface-mount packaging for space-constrained designs

Applications

General-purpose switching applications
Small-signal amplification circuits
Low-power electronic control systems

Procurement Notes

Verify the specific suffix against official Infineon documentation to confirm exact binning and tape-and-reel specifications. Confirm RoHS compliance status directly from the manufacturer datasheet prior to integration. Ensure the component matches the required hFE binning for your specific circuit design needs.

Selection Notes

Select this component when a high-gain NPN transistor is required in a compact SOT-363-6 footprint. Consider its 250 MHz transition frequency for moderate-speed switching or amplification tasks. Evaluate the 330 mW power dissipation limit against your thermal management strategy.

Part Context

This part belongs to the BC849 series of small-signal NPN transistors. It is designed for general-purpose use in consumer electronics and industrial equipment. The SOT-363-6 package allows for efficient PCB layout in dense assemblies.