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The Diotec Semiconductor BC850A-AQ is an SMD general-purpose NPN transistor housed in a SOT-23 (TO-236) package. It features a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 50 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a maximum DC collector current (IC) of 100 mA with a peak current (ICM) of 200 mA. Power dissipation reaches 300 mW for industrial and AEC-Q101 grades. The DC current gain (hFE) ranges from 180 to 290 at IC = 2 mA. Transition frequency (fT) is 300 MHz. Operating temperature spans -55°C to +150°C.
Verify the specific suffix configuration against project requirements. Confirm that the -AQ designation aligns with necessary automotive qualification standards. Ensure the selected component matches the required hFE group for circuit performance. Validate compliance with RoHS directives prior to integration into final assemblies.
Select this component when automotive-grade reliability is required for low-power NPN switching tasks. The BC850A variant provides a 45 V rating suitable for lower voltage logic interfaces compared to higher voltage counterparts. Consider the 300 MHz transition frequency for moderate-speed signal handling. Verify thermal management capabilities within the specified junction temperature range during operation.
This part belongs to the BC846 through BC850 series of SMD universal NPN transistors manufactured by Diotec Semiconductor. The series offers various voltage ratings and gain configurations across different packages. The BC850 specifically targets applications requiring 45 V breakdown characteristics. It serves as a complement to PNP variants within the same family.
BC850B/-AQ
The marking code for the BC850A is 1E.
Standard industrial and AEC-Q101 grades use gold bond wires. Only the commercial grade (-C) utilizes copper bond wires.
The maximum power dissipation for the industrial and AEC-Q101 grades is 300 mW when mounted on a PCB with the minimum recommended pad layout.