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The BC850AMTF is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a SOT-23 surface-mount package. It features a collector-base voltage of 50 V and a collector-emitter voltage of 45 V. The device supports a maximum DC collector current of 100 mA with a power dissipation rating of 310 mW at 25°C ambient temperature. Electrical characteristics include a minimum DC current gain (hFE) of 110 for the 'A' classification, a current gain bandwidth product of 300 MHz, and a low noise figure ranging from 1.2 dB to 4.0 dB.
Verify the specific hFE binning suffix matches the required gain range, as the 'A' designation indicates a 110 to 220 gain band. Confirm the tape and reel packaging format aligns with automated pick-and-place equipment specifications. Ensure the SOT-23 footprint dimensions are compatible with the target PCB layout. Validate that the thermal resistance parameters meet the system's heat dissipation requirements under continuous operation conditions.
Select this component when low noise figures are critical compared to standard general-purpose transistors. The BC850 offers a distinct advantage over the BC846/BC847/BC848 series regarding noise performance, making it preferable for audio or RF front-end stages. Consider the 45 V collector-emitter voltage limit against the circuit's supply rails. The 'A' classification provides a defined gain window, ensuring consistency in high-gain amplifier designs without requiring extensive manual sorting.
This part belongs to the BC846/BC847/BC848/BC850 family of NPN transistors. It serves as the complement to the PNP BC856/BC857/BC858/BC859/BC860 series. The 'M' suffix denotes the SOT-23 package, while 'TF' indicates tape and reel packing. The marking code for this specific variant is 8EA.
BC846AMTF
The BC850 is specifically characterized by lower noise figures, typically between 1.2 dB and 4.0 dB, whereas the BC846 has higher noise figures ranging from 2.0 dB to 10.0 dB.
The 'A' suffix indicates the DC current gain (hFE) classification, specifying a minimum gain of 110 and a maximum of 220 at IC = 2 mA and VCE = 5 V.
Yes, the device has a current gain bandwidth product (fT) of 300 MHz, making it suitable for applications operating up to and beyond 100 MHz.