SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC850AMTF is a single NPN silicon bipolar junction transistor manufactured by onsemi. It is housed in an SOT-23-3 surface-mount package and designed for general-purpose amplification applications. The device supports a maximum continuous collector current of 100 mA and withstands a collector-emitter voltage (VCEO) of 45 V, with a collector-base voltage (VCBO) rating of 50 V. Key electrical characteristics include a transition frequency (fT) of 300 MHz and a power dissipation capability of 310 mW. The component operates within a temperature range up to +150°C and features a collector-emitter saturation voltage of 200 mV.
Verify the specific manufacturer lot and date code against the original design requirements before integration. Confirm RoHS compliance status through official documentation as regulatory standards may vary by production batch. Ensure that the SOT-23-3 footprint matches the PCB layout specifications precisely. Check for any end-of-life notices or production change notifications from onsemi to guarantee long-term supply stability for the project lifecycle.
Select this component when a standard NPN transistor with moderate gain and 45 V breakdown voltage is required in a compact SOT-23-3 package. It serves as a direct replacement for other BC850 series variants within the same voltage and current limits. Consider the 300 MHz fT specification for high-speed switching or RF amplification tasks where lower parasitic capacitance is beneficial compared to larger packages.
The BC850AMTF belongs to the BC850 family of NPN general-purpose transistors produced by onsemi. This series is widely utilized in portable devices and battery-powered equipment due to its low power consumption and small form factor. The AMTF suffix typically denotes a specific tape-and-reel packaging configuration intended for automated surface-mount assembly processes.
Compatible substitutes include BC850CMTF and BC850B, provided they meet the same 45 V VCEO and 100 mA IC ratings. Verify that alternative parts maintain equivalent hFE gain ranges and thermal characteristics to ensure circuit performance consistency.