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The BC850AW RFG is an NPN general-purpose bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device operates within a junction temperature range of -55°C to 150°C and has a maximum power dissipation of 200 mW. It exhibits a transition frequency of 100 MHz and a minimum DC current gain of 420 at 2 mA and 5 V. The component is housed in a SOT-323 surface-mount package.
Verify the manufacturer marking matches Taiwan Semiconductor Corporation specifications. Confirm the suffix RFG corresponds to the correct tape and reel packaging format. Ensure the component meets RoHS compliance requirements for the intended assembly process. Cross-reference the datasheet electrical characteristics against system design constraints before integration.
Select this component when a high-gain NPN transistor is required for low-voltage, low-current applications. The SOT-323 package offers space efficiency for compact designs. Consider the 45 V breakdown voltage limit and 100 mA current capacity during circuit planning. Evaluate thermal management needs given the 200 mW power dissipation rating in enclosed environments.
This part belongs to the BC850 series of NPN general-purpose transistors. It shares functional similarities with other devices in the BC847/BC848/BC849/BC850 family but offers specific gain and voltage characteristics defined by the manufacturer. The RFG suffix indicates a specific packaging variant distributed by Taiwan Semiconductor Corporation.
BC850CW,115 from Nexperia is a documented direct substitute.