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The BC850AW is a small signal NPN bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. The device utilizes an epitaxial silicon planar design housed in a SOT-323 surface-mount package. It complies with RoHS directives and includes halogen-free green molding compound. The component is designed for general-purpose amplifier applications with a minimum DC current gain (hFE) of 110.
Verify the manufacturer marking on the component body to confirm it matches the specified code for the BC850AW variant. Ensure the package type corresponds to SOT-323 dimensions. Confirm RoHS compliance status through the supplier's certificate of conformity. Check for any specific AEC-Q101 qualification requirements if automotive grade reliability is necessary for the application.
Select this component for low-voltage, low-current signal processing tasks requiring high current gain. The SOT-323 package is suitable for space-constrained printed circuit board layouts. Consider the 45 V collector-emitter voltage rating when designing circuits with higher supply voltages. Verify thermal dissipation capabilities within the 200 mW power limit during operation.
This part belongs to the BC846/BC847/BC848/BC849/BC850 series of NPN general-purpose transistors. These devices are widely used in consumer electronics and industrial control systems due to their standardized pinout and reliable performance characteristics. The AW suffix typically denotes specific binning or packaging variations within the series.
Direct substitutes include BC847AW, BC848AW, and BC849AW from compatible manufacturers. Cross-reference datasheets to ensure matching voltage and current ratings before substitution.