ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-23-3
- Series：-
- Mfr：Fairchild Semiconductor
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 2mA, 5V
- Power - Max：310 mW
- Frequency - Transition：300MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
Download product information
Overview
The BC850BMTF is a PNP small signal bipolar junction transistor manufactured by Fairchild Semiconductor. It is housed in a SOT-23 surface-mount package and designed for general-purpose amplification applications. The device features a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 45 V. It has a minimum DC current gain (hFE) of 200, ensuring reliable performance in low-power switching and linear circuits.
Feature Summary
- PNP silicon planar epitaxial design
- General-purpose amplifier capability
- Lead-free and RoHS compliant construction
Applications
- General purpose amplifier circuits
- Low power switching applications
- Signal processing stages
Procurement Notes
Verify the manufacturer marking and date code against official Fairchild Semiconductor documentation to confirm authenticity. Ensure the component matches the specified SOT-23 package dimensions and pinout configuration. Check for compliance with relevant environmental standards as indicated in the product datasheet before integration into final assemblies.
Selection Notes
Select this component for designs requiring a compact PNP transistor with moderate current handling capabilities. The high hFE range makes it suitable for applications demanding efficient signal amplification. Consider thermal management requirements based on the specific operating conditions and power dissipation limits defined in the electrical characteristics table.
Part Context
This part belongs to the BC850 series of NPN/PNP complementary pairs often used together in differential amplifier configurations. The BC850B variant specifically denotes a binning category for higher current gain compared to standard variants. It serves as a discrete alternative to integrated transistor arrays in cost-sensitive consumer electronics.
Replacement Considerations
Compatible substitutes include the BC857B and BC860B from various manufacturers, provided they meet the same SOT-23 footprint and electrical specifications. Verify that replacement parts offer equivalent hFE ranges and voltage ratings to maintain circuit performance integrity.
