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The BC850BW,135 is a single NPN bipolar junction transistor manufactured by Nexperia. It utilizes silicon technology and is housed in an SOT-323 (SC-70) surface-mount package with three terminals. Key electrical specifications include a maximum collector current of 100 mA, a collector-emitter voltage of 45 V, and a collector-base voltage of 50 V. The device features a minimum DC current gain of 200 at 2 mA and 5 V, with a transition frequency of 100 MHz. Power dissipation is rated at 200 mW, and it operates within a temperature range of -65 °C to +150 °C.
Verify the specific suffix '135' corresponds to the SOT-323 packaging and reel quantity requirements. Confirm RoHS compliance status through official Nexperia documentation prior to integration. Ensure the ordering part number matches the exact pinout and electrical tolerances defined in the datasheet to avoid compatibility issues in final assembly.
Select this component when a compact NPN transistor with moderate voltage ratings is required. The SOT-323 package offers space efficiency for dense PCB layouts. Consider the 100 mA current limit and 200 mW power dissipation constraints during thermal design. Verify that the 45 V collector-emitter voltage meets the circuit's peak operating conditions.
This part belongs to the BC850 series of NPN general-purpose transistors from Nexperia. The series includes variants such as BC850B and BC850C, which differ primarily in current gain ranges and package types like SOT-23. The BC850BW specifically denotes the B-grade gain variant packaged in the small outline SC-70 form factor.
BC850B,235 (SOT-23 package)
The maximum collector-emitter voltage (VCEO) is 45 V.
It uses the SOT-323 (SC-70) surface-mount package.
The minimum DC current gain (hFE) is 200, measured at 2 mA and 5 V.