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BC850BWE6327HTSA1 is an NPN silicon single bipolar junction transistor from Infineon Technologies, housed in a surface-mount SOT-323 (PG-SOT323) package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. The device has a power dissipation rating of 250 mW and a transition frequency of 250 MHz. Operating temperature ranges from -55°C to +150°C.
Verify the component authenticity through official Infineon channels or authorized distributors. Confirm the specific suffix matches the required datasheet specifications. Check RoHS compliance status as per current regulatory standards. Ensure storage conditions align with manufacturer guidelines to prevent moisture damage prior to soldering.
Select this part for designs requiring high-frequency performance within a small footprint. Compare the 45V voltage rating against circuit requirements. Evaluate thermal management needs given the 250mW dissipation limit. Consider the SOT-323 package dimensions for PCB layout constraints.
This component belongs to the BC850 series of NPN transistors. It shares similar electrical characteristics with other variants in the family but differs in packaging and specific suffix designations. The SOT-323 form factor distinguishes it from larger through-hole alternatives.