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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT),Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BC850CE6327HTSA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 45 V. The device operates within a temperature range of -65°C to +150°C, with a power dissipation capacity of 330 mW. Key electrical parameters include a DC current gain (hFE) ranging from 200 to 450 and a transition frequency of 250 MHz. It is housed in an SMD/SMT PG-SOT23 package.
Feature Summary
- Single NPN silicon bipolar junction transistor configuration
- High DC current gain suitable for general amplification
- Wide operating temperature range for robust performance
- Surface-mount PG-SOT23 package design
Applications
- General-purpose signal amplification circuits
- Switching applications requiring moderate current handling
- Audio pre-amplifier stages
- Low-frequency analog signal processing
Procurement Notes
This component is scheduled for obsolescence and will be discontinued by the manufacturer. Verify end-of-life status and availability through authorized distributors before finalizing designs. Ensure compliance with RoHS directives as specified in official documentation. Confirm package integrity and pinout alignment during procurement to avoid integration issues.
Selection Notes
Select this part for applications requiring a single NPN BJT with moderate gain and current capabilities. Consider the 45V breakdown voltage and 100mA continuous current limits when designing circuit topologies. Evaluate thermal management requirements given the 330mW power dissipation limit. Compare against alternative series if higher gain or different polarity is required.
Part Context
The BC850C belongs to Infineon's BC850 series of small-signal NPN transistors. The 'E6327' suffix typically denotes specific tape and reel packaging configurations used for automated surface-mount assembly. This variant is part of a broader family of general-purpose BJTs designed for cost-effective and reliable electronic implementations.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source data. Due to the obsolete status, verify equivalent components with matching electrical characteristics and package dimensions through official Infineon cross-reference tools.
