ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SOT-323
- Series：-
- Mfr：Taiwan Semiconductor Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：200 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：SOT-323
- Grade：-
- Qualification：-
Download product information
Overview
The BC850CW RFG is an NPN general-purpose bipolar junction transistor manufactured by Taiwan Semiconductor Corporation. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 100 mA. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 200 mW of power. Key electrical characteristics include a transition frequency of 100 MHz, a minimum DC current gain (hFE) of 420 at 2 mA and 5 V, and a collector-emitter saturation voltage of 600 mV at 5 mA base and 100 mA collector currents.
Feature Summary
- NPN epitaxial silicon planar design for general-purpose amplification
- Low current operation with a maximum collector current of 100 mA
- Low voltage handling capability with a breakdown voltage of 45 V
- High DC current gain ensuring efficient signal control
Applications
- General purpose amplifier circuits
- Switching applications in low-power systems
- Signal processing stages requiring high gain
Procurement Notes
Verify the specific manufacturer part number BC850CW RFG against official Taiwan Semiconductor Corporation documentation to confirm pinout compatibility and electrical tolerances. Ensure that the SOT-323 package dimensions match the target PCB footprint requirements. Confirm RoHS compliance status through the latest datasheet revision before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring a compact surface-mount NPN transistor with moderate voltage ratings. The 100 mA current capacity and 45 V breakdown voltage suit standard logic-level switching tasks. Consider the 200 mW power dissipation limit when designing thermal management strategies for dense circuit layouts.
Part Context
This component belongs to the BC850 series of NPN general-purpose transistors. It shares functional similarities with other devices in the BC847/BC848/BC849 family but offers distinct gain characteristics. The SOT-323 package provides a small form factor suitable for space-constrained portable electronics and modern consumer devices.
Replacement Considerations
- BC850CW,115
- BC850CT/R7
- BC850CMTF
FAQ
What is the maximum collector-emitter voltage for the BC850CW RFG?
The maximum collector-emitter voltage (Vceo) is 45 V.
What is the minimum DC current gain specified for this transistor?
The minimum DC current gain (hFE) is 420, measured at a collector current of 2 mA and a collector-emitter voltage of 5 V.
What package type does the BC850CW RFG use?
The device is housed in an SOT-323 (SC-70) surface-mount package.
