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The BC850CW,135 is an NPN general-purpose silicon bipolar junction transistor manufactured by Nexperia. It is housed in a SOT-323 (SC-70) surface-mount plastic package with three leads. The device supports a maximum collector current of 100 mA and a collector-emitter voltage of 45 V. Key electrical characteristics include a DC current gain (hFE) ranging from 420 to 800 at 2 mA, a transition frequency of 100 MHz, and a total power dissipation of 200 mW. The component operates within an ambient temperature range of -65 °C to +150 °C.
Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details such as reel or cut tape specifications. Ensure the component status aligns with current production requirements. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before finalizing procurement orders.
Select this component when designing circuits requiring small form factor NPN transistors with high current gain. The BC850CW variant offers higher minimum gain compared to the BC850BW version. Consider the thermal resistance and power dissipation limits relative to the PCB layout and operating environment to ensure reliable performance under specified load conditions.
This component belongs to the BC850W series of NPN general-purpose transistors produced by Nexperia. The BC850CW designation specifically indicates the binning grade for DC current gain. It serves as the NPN complement to the BC860W PNP transistor. The product line originates from the former NXP Standard Product business, now operating under the Nexperia brand.
BC850CW/T3