SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BC850CW_R1_00001 is an NPN general-purpose bipolar junction transistor manufactured by Panjit International Inc. It features a maximum collector-emitter voltage (VCEO) of 45 V and a continuous collector current (IC) rating of 100 mA. The device utilizes a silicon planar epitaxial structure housed in a compact SOT-323 surface-mount package. Designed for low-power applications, it offers high DC current gain characteristics suitable for signal amplification and switching tasks within consumer electronics and industrial control systems.
Verify the specific suffix R1_00001 against official Panjit documentation to confirm reel packaging specifications and tape-and-reel dimensions. Ensure compatibility with standard SOT-323 footprint designs. Cross-reference RoHS compliance status directly with the manufacturer's latest datasheet or product change notifications prior to final procurement decisions.
Select this component when a small-form-factor NPN transistor is required for low-voltage, low-current applications. The SOT-323 package suits dense PCB layouts where space is constrained. Verify that the 45 V breakdown voltage and 100 mA current limits align with the circuit's operational requirements and thermal management capabilities.
This part belongs to Panjit's GPT-02TN series of NPN general-purpose transistors. The series provides standardized electrical characteristics for common amplification and switching roles. The BC850 variant specifically targets applications requiring moderate voltage handling within a miniature surface-mount envelope, supporting mass production in various electronic assemblies.
Consult official Panjit substitution guides for verified equivalents. Generic replacements must match the SOT-323 package, NPN polarity, and minimum 45 V / 100 mA ratings. Validate pinout compatibility and thermal performance before implementation.