BC850CWE6327HTSA1

Description：TRANS NPN 45V 0.1A PG-SOT323
Series：-

SKU:1e6a30b3bb93 Category: Single Bipolar Transistors Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：TRANS NPN 45V 0.1A PG-SOT323
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：45 V
Vce Saturation (Max) @ Ib, Ic：600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)：15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
Power - Max：250 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：SC-70, SOT-323
Supplier Device Package：PG-SOT323
Grade：-
Qualification：-

Download product information

BC850CWE6327HTSA1

Overview

The BC850CWE6327HTSA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package with two leads. The device supports a maximum collector-emitter voltage of 45 V and a continuous collector current of 100 mA. Key electrical parameters include a DC current gain (hFE) range of 200 to 450, a transition frequency of 250 MHz, and a power dissipation rating of 330 mW. It operates within a temperature range of -65 °C to +150 °C.

Feature Summary

High DC current gain for effective signal amplification
Wide operating temperature range suitable for demanding environments
Compact surface-mount packaging for space-constrained designs

Applications

General-purpose signal amplification circuits
Switching applications in low-power electronics
Audio pre-amplifier stages

Procurement Notes

Verify the specific hFE binning (C grade: 200-450) against circuit requirements. Confirm the SOT-23-3 footprint compatibility during PCB layout. Check for RoHS compliance documentation. Ensure storage conditions meet moisture sensitivity level standards. Validate that the 330 mW power dissipation limit is sufficient for the intended thermal environment.

Selection Notes

Select this component when a moderate-gain NPN transistor is required in a small form factor. Compare against BC850B if lower gain thresholds are acceptable. Consider thermal management strategies given the 330 mW dissipation limit. Verify voltage ratings align with the maximum supply voltages in the target application circuit.

Part Context

This part belongs to the BC850 series of general-purpose NPN transistors from Infineon. It shares the same physical package and basic structure as variants like BC850B but differs in current gain specifications. The 'WE6327HTSA1' suffix indicates specific tape-and-reel packaging and manufacturing lot details.